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FDMC8622

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onsemi FDMC8622

onsemi FDMC8622 overview

ON Semiconductor FDMC8622 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of...

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Part number or familyFDMC8622
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDMC8622 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):16 A, Drain Current-Max (ID):4 A, Drain-source On Resistance-Max:56 mΩ
DescriptionON Semiconductor FDMC8622 MOSFET, N-Channel Shielded Gate Power Trench MOSFET 100V, 16A, 56mΩ
DescriptionON Semiconductor FDMC8622 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):16 A, Drain Current-Max (ID):4 A, Drain-source On Resistance-Max:56 mΩ

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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