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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDMC86012 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):88 A, Drain Current-Max (ID):23 A, Drain-source On Resistance-Max:2.7 mΩ
DescriptionON Semiconductor FDMC86012 MOSFET, N-Channel Power Trench MOSFET 30V, 88A, 2.7mΩ
DescriptionON Semiconductor FDMC86012 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):88 A, Drain Current-Max (ID):23 A, Drain-source On Resistance-Max:2.7 mΩ
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