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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDMC4435BZ Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):31 A, Drain Current-Max (ID):8.5 A, Drain-source On Resistance-Max:20 mΩ
DescriptionON Semiconductor FDMC4435BZ Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:5,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (Abs) (ID):31 A,Drain Current-Max (ID):8.5 A,Drain-source On Resistance-Max:20 m?
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