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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDMA1025P Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (Abs) (ID):3.1 A, Drain Current-Max (ID):3.1 A, Drain-source On Resistance-Max:220 mΩ
DescriptionON Semiconductor FDMA1025P MOSFET, Dual P-Channel PowerTrench MOSFET -20V, -3.1A, 155mΩ
DescriptionON Semiconductor FDMA1025P Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:6,DS Breakdown Voltage-Min:20 V,Number of Elements:2,Drain Current-Max (Abs) (ID):3.1 A,Drain Current-Max (ID):3.1 A,Drain-source On Resistance-Max:220 m?
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