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FDI030N06

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onsemi FDI030N06

onsemi FDI030N06 overview

ON Semiconductor FDI030N06 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of...

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Part number or familyFDI030N06
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDI030N06 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):193 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:3.2 mΩ
DescriptionON Semiconductor FDI030N06 MOSFET, N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ
DescriptionON Semiconductor FDI030N06 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):193 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:3.2 mΩ

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