FDD86250_F085 by onsemi | StockCheck - Aggregating Everything

onsemi FDD86250_F085 overview

ON Semiconductor FDD86250_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Numb...

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Part number or familyFDD86250_F085

Product groupModules

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Manufactured byonsemi

Product groupModules

DescriptionON Semiconductor FDD86250_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:150 V, Number of Elements:1, Drain Current-Max (ID):50 A, Drain-source On Resistance-Max:22 mΩ

DescriptionON Semiconductor FDD86250_F085 MOSFET, N-Channel Shielded Gate PowerTrench MOSFET 15 V, 50 A, 22 mΩ

DescriptionON Semiconductor FDD86250_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:150 V,Number of Elements:1,Drain Current-Max (ID):50 A,Drain-source On Resistance-Max:22 m?

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