onsemi FDD86113LZ overview
ON Semiconductor FDD86113LZ Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number ...
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Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor FDD86113LZ Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):5.5 A, Drain Current-Max (ID):4.2 A, Drain-source On Resistance-Max:104 mΩ
DescriptionON Semiconductor FDD86113LZ MOSFET, N-Channel Shielded Gate PowerTrench MOSFET 100V , 5.5 A, 104 mΩ
DescriptionON Semiconductor FDD86113LZ Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):5.5 A, Drain Current-Max (ID):4.2 A, Drain-source On Resistance-Max:104 mΩ
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Transistor
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