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FDD86102LZ

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onsemi FDD86102LZ

onsemi FDD86102LZ overview

ON Semiconductor FDD86102LZ Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number ...

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Part number or familyFDD86102LZ
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDD86102LZ Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):35 A, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:22.5 mΩ
DescriptionON Semiconductor FDD86102LZ Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):35 A, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:22.5 mΩ

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