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DescriptionON Semiconductor FDD8447L_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:40 V, Number of Elements:1, Drain Current-Max (Abs) (ID):50 A, Drain Current-Max (ID):50 A, Drain-source On Resistance-Max:8.5 mΩ
DescriptionON Semiconductor FDD8447L_F085 MOSFET, N-Channel PowerTrench MOSFET 40V, 50A, 11.0mΩ
DescriptionON Semiconductor FDD8447L_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:40 V,Number of Elements:1,Drain Current-Max (Abs) (ID):50 A,Drain Current-Max (ID):50 A,Drain-source On Resistance-Max:8.5 m?
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