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DescriptionON Semiconductor FDD8424H Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:40 V, Number of Elements:2, Drain Current-Max (Abs) (ID):9 A, Drain Current-Max (ID):20 A, Drain-source On Resistance-Max:24 mΩ
DescriptionON Semiconductor FDD8424H Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:40 V, Number of Elements:2, Drain Current-Max (Abs) (ID):9 A, Drain Current-Max (ID):20 A, Drain-source On Resistance-Max:24 mΩ
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