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FDD3690

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onsemi FDD3690

onsemi FDD3690 overview

ON Semiconductor FDD3690 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of ...

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Part number or familyFDD3690
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDD3690 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):22 A, Drain Current-Max (ID):22 A, Drain-source On Resistance-Max:64 mΩ
DescriptionON Semiconductor FDD3690 MOSFET, 100V N-Channel PowerTrench MOSFET 22A, 64mΩ
DescriptionON Semiconductor FDD3690 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):22 A, Drain Current-Max (ID):22 A, Drain-source On Resistance-Max:64 mΩ

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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