Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDD3510H Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:80 V, Number of Elements:2, Drain Current-Max (Abs) (ID):13.9 A, Drain Current-Max (ID):4.3 A, Drain-source On Resistance-Max:80 mΩ
DescriptionON Semiconductor FDD3510H Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:80 V, Number of Elements:2, Drain Current-Max (Abs) (ID):13.9 A, Drain Current-Max (ID):4.3 A, Drain-source On Resistance-Max:80 mΩ
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
onsemi
View onsemi profile
Available from
Sourcing support available
Start a sourcing request