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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDD306P Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:12 V, Number of Elements:1, Drain Current-Max (Abs) (ID):6.7 A, Drain Current-Max (ID):6.7 A, Drain-source On Resistance-Max:28 mΩ
DescriptionON Semiconductor FDD306P Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:12 V, Number of Elements:1, Drain Current-Max (Abs) (ID):6.7 A, Drain Current-Max (ID):6.7 A, Drain-source On Resistance-Max:28 mΩ
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