onsemi FDD20AN06A0_F085 overview
FDD20AN06A0_F085 by onsemi is listed under Discrete Semiconductor Products. ON Semiconductor FDD20AN06A0_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain…
Manufactured byonsemi
Part number or familyFDD20AN06A0_F085
Product typeDiscrete Semiconductor Product
Product details
Manufactured byonsemi
Product typeDiscrete Semiconductor Product
DescriptionON Semiconductor FDD20AN06A0_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):45 A, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:20 mΩ
DescriptionON Semiconductor FDD20AN06A0_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):45 A, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:20 mΩ
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Discrete Semiconductor Product
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