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FDD18N20LZ

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onsemi FDD18N20LZ

onsemi FDD18N20LZ overview

ON Semiconductor FDD18N20LZ Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number ...

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Part number or familyFDD18N20LZ
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDD18N20LZ Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (Abs) (ID):16 A, Drain Current-Max (ID):16 A, Drain-source On Resistance-Max:130 mΩ
DescriptionON Semiconductor FDD18N20LZ Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (Abs) (ID):16 A, Drain Current-Max (ID):16 A, Drain-source On Resistance-Max:130 mΩ

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