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FDC5661N_F085

onsemi · Modules

onsemi FDC5661N_F085

onsemi FDC5661N_F085 overview

ON Semiconductor FDC5661N_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Numb...

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Part number or familyFDC5661N_F085
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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDC5661N_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):4.3 A, Drain Current-Max (ID):4.3 A, Drain-source On Resistance-Max:47 mΩ
DescriptionON Semiconductor FDC5661N_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:6,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):4.3 A,Drain Current-Max (ID):4.3 A,Drain-source On Resistance-Max:47 m?

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