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FDB86135

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onsemi FDB86135

onsemi FDB86135 overview

ON Semiconductor FDB86135 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of...

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Part number or familyFDB86135
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDB86135 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):120 A, Drain Current-Max (ID):75 A, Drain-source On Resistance-Max:3.5 mΩ
DescriptionON Semiconductor FDB86135 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):120 A, Drain Current-Max (ID):75 A, Drain-source On Resistance-Max:3.5 mΩ

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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