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FDB8444

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onsemi FDB8444

onsemi FDB8444 overview

ON Semiconductor FDB8444 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of ...

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Part number or familyFDB8444
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDB8444 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:40 V, Number of Elements:1, Drain Current-Max (Abs) (ID):70 A, Drain Current-Max (ID):70 A, Drain-source On Resistance-Max:9.9 Ω
DescriptionON Semiconductor FDB8444 MOSFET, N-Channel PowerTrench® MOSFET, 40V, 70A, 5.5mΩ
DescriptionON Semiconductor FDB8444 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:40 V, Number of Elements:1, Drain Current-Max (Abs) (ID):70 A, Drain Current-Max (ID):70 A, Drain-source On Resistance-Max:9.9 Ω

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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