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FDB8443

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onsemi FDB8443

onsemi FDB8443 overview

ON Semiconductor FDB8443 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of ...

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Part number or familyFDB8443
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDB8443 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:40 V, Number of Elements:1, Drain Current-Max (Abs) (ID):80 A, Drain Current-Max (ID):25 A, Drain-source On Resistance-Max:3 mΩ
DescriptionON Semiconductor FDB8443 MOSFET, N-Channel PowerTrench MOSFET 40V, 182A, 3mΩ
DescriptionON Semiconductor FDB8443 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:40 V, Number of Elements:1, Drain Current-Max (Abs) (ID):80 A, Drain Current-Max (ID):25 A, Drain-source On Resistance-Max:3 mΩ

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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