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FDB8441

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onsemi FDB8441

onsemi FDB8441 overview

ON Semiconductor FDB8441 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of ...

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Part number or familyFDB8441
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDB8441 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:40 V, Number of Elements:1, Drain Current-Max (Abs) (ID):28 A, Drain Current-Max (ID):28 A, Drain-source On Resistance-Max:2.5 mΩ
DescriptionON Semiconductor FDB8441 MOSFET, N-Channel PowerTrench MOSFET 40V, 80A, 2.5mΩ
DescriptionON Semiconductor FDB8441 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:40 V, Number of Elements:1, Drain Current-Max (Abs) (ID):28 A, Drain Current-Max (ID):28 A, Drain-source On Resistance-Max:2.5 mΩ

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Product group Modules Explore Modules Explore Transistor Explore Semiconductors, Discretes
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