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Product groupModules
DescriptionON Semiconductor FDB16AN08A0 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:75 V, Number of Elements:1, Drain Current-Max (Abs) (ID):9 A, Drain Current-Max (ID):9 A, Drain-source On Resistance-Max:16 mΩ
DescriptionON Semiconductor FDB16AN08A0 MOSFET, N-Channel PowerTrench MOSFET, 75 V, 58 A, 16 mΩ
DescriptionON Semiconductor FDB16AN08A0 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:75 V, Number of Elements:1, Drain Current-Max (Abs) (ID):9 A, Drain Current-Max (ID):9 A, Drain-source On Resistance-Max:16 mΩ
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