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FDB029N06

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onsemi FDB029N06

onsemi FDB029N06 overview

ON Semiconductor FDB029N06 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...

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Part number or familyFDB029N06
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDB029N06 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):193 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:3.1 mΩ
DescriptionON Semiconductor FDB029N06 MOSFET, N-Channel PowerTrench MOSFET 60V, 193A, 3.1mΩ
DescriptionON Semiconductor FDB029N06 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):193 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:3.1 mΩ

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