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FDB024N04AL7

onsemi · Modules

onsemi FDB024N04AL7

onsemi FDB024N04AL7 overview

ON Semiconductor FDB024N04AL7 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Numbe...

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDB024N04AL7 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:40 V, Number of Elements:1, Drain Current-Max (Abs) (ID):219 A, Drain Current-Max (ID):100 A, Drain-source On Resistance-Max:2.4 mΩ
DescriptionON Semiconductor FDB024N04AL7 MOSFET, N-Channel PowerTrench MOSFET 40V, 219A, 2.4mΩ
DescriptionON Semiconductor FDB024N04AL7 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:6,DS Breakdown Voltage-Min:40 V,Number of Elements:1,Drain Current-Max (Abs) (ID):219 A,Drain Current-Max (ID):100 A,Drain-source On Resistance-Max:2.4 m?

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