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FDB020N08BL7

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onsemi FDB020N08BL7

onsemi FDB020N08BL7 overview

ON Semiconductor FDB020N08BL7 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Numbe...

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Part number or familyFDB020N08BL7
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDB020N08BL7 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:80 V, Number of Elements:1, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:2.4 mΩ
DescriptionON Semiconductor FDB020N08BL7 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:80 V, Number of Elements:1, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:2.4 mΩ

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