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FDA032N08

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onsemi FDA032N08

onsemi FDA032N08 overview

ON Semiconductor FDA032N08 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of...

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Part number or familyFDA032N08
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDA032N08 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:75 V, Number of Elements:1, Drain Current-Max (Abs) (ID):235 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:3.2 mΩ
DescriptionON Semiconductor FDA032N08 MOSFET, N-Channel PowerTrench MOSFET 75V, 235A, 3.2mΩ
DescriptionON Semiconductor FDA032N08 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:75 V, Number of Elements:1, Drain Current-Max (Abs) (ID):235 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:3.2 mΩ

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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