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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FCPF190N60_F152 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1
DescriptionON Semiconductor FCPF190N60_F152 MOSFET, N-Channel SuperFET II MOSFET 600V, 20.2A, 199mΩ
DescriptionON Semiconductor FCPF190N60_F152 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1
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onsemi
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