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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FCP13N60N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):13 A, Drain Current-Max (ID):13 A, Drain-source On Resistance-Max:258 mΩ
DescriptionON Semiconductor FCP13N60N MOSFET, Power MOSFET, N-Channel, SUPREMOS, FAST, 600 V, 13 A, 258 mΩ, TO-220
DescriptionON Semiconductor FCP13N60N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):13 A, Drain Current-Max (ID):13 A, Drain-source On Resistance-Max:258 mΩ
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