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FCP110N65F

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onsemi FCP110N65F

onsemi FCP110N65F overview

ON Semiconductor FCP110N65F Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...

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Part number or familyFCP110N65F
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FCP110N65F Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:650 V, Number of Elements:1, Drain Current-Max (Abs) (ID):35 A, Drain Current-Max (ID):35 A, Drain-source On Resistance-Max:110 mΩ
DescriptionON Semiconductor FCP110N65F MOSFET, Power MOSFET, N-Channel, SUPERFET II, FRFET, 650V, 35A, 110mΩ, TO-220
DescriptionON Semiconductor FCP110N65F Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:650 V, Number of Elements:1, Drain Current-Max (Abs) (ID):35 A, Drain Current-Max (ID):35 A, Drain-source On Resistance-Max:110 mΩ

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