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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FCH35N60 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):35 A, Drain Current-Max (ID):35 A, Drain-source On Resistance-Max:98 mΩ
DescriptionON Semiconductor FCH35N60 MOSFET, Power MOSFET, N-Channel, SUPERFET, Easy Drive, 600 V, 35 A, 98 mΩ, TO-247
DescriptionON Semiconductor FCH35N60 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):35 A, Drain Current-Max (ID):35 A, Drain-source On Resistance-Max:98 mΩ
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