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FCH130N60

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onsemi FCH130N60

onsemi FCH130N60 overview

ON Semiconductor FCH130N60 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of...

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Part number or familyFCH130N60
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FCH130N60 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):28 A, Drain Current-Max (ID):28 A, Drain-source On Resistance-Max:130 mΩ
DescriptionON Semiconductor FCH130N60 MOSFET, Power MOSFET, N-Channel, SUPERFET II, FAST, 600V, 28A, 130mΩ, TO-247
DescriptionON Semiconductor FCH130N60 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):28 A, Drain Current-Max (ID):28 A, Drain-source On Resistance-Max:130 mΩ

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