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FCB20N60_F085

onsemi · Modules

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onsemi FCB20N60_F085

onsemi FCB20N60_F085 overview

ON Semiconductor FCB20N60_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Numb...

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Part number or familyFCB20N60_F085
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FCB20N60_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):20 A, Drain Current-Max (ID):20 A, Drain-source On Resistance-Max:198 mΩ
DescriptionON Semiconductor FCB20N60_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):20 A,Drain Current-Max (ID):20 A,Drain-source On Resistance-Max:198 m?

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