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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor ECH8673 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:40 V, Number of Elements:2, Drain Current-Max (ID):3.5 A, Drain-source On Resistance-Max:85 mΩ
DescriptionON Semiconductor ECH8673 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:40 V, Number of Elements:2, Drain Current-Max (ID):3.5 A, Drain-source On Resistance-Max:85 mΩ
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