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ECH8601M-TL-H

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onsemi ECH8601M-TL-H

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ON Semiconductor ECH8601M-TL-H Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON DRAIN, 2 ELEMENTS WITH BU...

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Part number or familyECH8601M-TL-H
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor ECH8601M-TL-H Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:8, DS Breakdown Voltage-Min:24 V, Number of Elements:2, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:30 mΩ
DescriptionON Semiconductor ECH8601M-TL-H Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:8, DS Breakdown Voltage-Min:24 V, Number of Elements:2, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:30 mΩ

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