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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MJE18009BA Power Bipolar Transistor, Collector-Emitter Voltage-Max:450 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):7, Transition Frequency-Nom (fT):12 MHz
DescriptionON Semiconductor MJE18009BA Power Bipolar Transistor, Collector-Emitter Voltage-Max:450 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):7, Transition Frequency-Nom (fT):12 mΩz
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