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MJD41C-1

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onsemi MJD41C-1

onsemi MJD41C-1 overview

ON Semiconductor MJD41C-1 Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):6 A, Polarity/Channel Type:NPN, Surface Moun...

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Part number or familyMJD41C-1
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MJD41C-1 Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):6 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):15, Transition Frequency-Nom (fT):3 MHz
DescriptionON Semiconductor MJD41C-1 Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):6 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):15, Transition Frequency-Nom (fT):3 mΩz

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Product group Modules Explore Modules Explore Transistor Explore Power Bipolar Transistors
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