onsemi MJD350-1 overview
MJD350-1 is a transistor made by onsemi. ON Semiconductor MJD350-1 Power Bipolar Transistor, Collector-Emitter Voltage-Max:300 V, Collector Current-Max (IC):500 mA, Polarity/Channel Type:PNP, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):30 ON…
Product details
Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor MJD350-1 Power Bipolar Transistor, Collector-Emitter Voltage-Max:300 V, Collector Current-Max (IC):500 mA, Polarity/Channel Type:PNP, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):30
DescriptionON Semiconductor MJD350-1 Power Bipolar Transistor, Collector-Emitter Voltage-Max:300 V, Collector Current-Max (IC):500 mΩ, Polarity/Channel Type:PNP, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):30
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