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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MJD32CT4 Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:PNP, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):10, Transition Frequency-Nom (fT):3 MHz
DescriptionON Semiconductor MJD32CT4 Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:PNP, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):10, Transition Frequency-Nom (fT):3 mΩz
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