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MJD18002D2-1

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onsemi MJD18002D2-1

onsemi MJD18002D2-1 overview

ON Semiconductor MJD18002D2-1 Power Bipolar Transistor, Collector-Emitter Voltage-Max:450 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:NPN, Surface ...

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Part number or familyMJD18002D2-1
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MJD18002D2-1 Power Bipolar Transistor, Collector-Emitter Voltage-Max:450 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):6, Transition Frequency-Nom (fT):13 MHz
DescriptionON Semiconductor MJD18002D2-1 Power Bipolar Transistor, Collector-Emitter Voltage-Max:450 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):6, Transition Frequency-Nom (fT):13 mΩz

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