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Product groupModules
DescriptionON Semiconductor MJD148-2 Power Bipolar Transistor, Collector-Emitter Voltage-Max:45 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):30, Transition Frequency-Nom (fT):3 MHz
DescriptionON Semiconductor MJD148-2 Power Bipolar Transistor, Collector-Emitter Voltage-Max:45 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):30, Transition Frequency-Nom (fT):3 mΩz
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