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MJB6491T4

onsemi · Modules

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onsemi MJB6491T4

onsemi MJB6491T4 overview

ON Semiconductor MJB6491T4 Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):15 A, Polarity/Channel Type:PNP, Surface Mou...

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Part number or familyMJB6491T4
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MJB6491T4 Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):15 A, Polarity/Channel Type:PNP, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):5, Transition Frequency-Nom (fT):5 MHz
DescriptionON Semiconductor MJB6491T4 Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):15 A, Polarity/Channel Type:PNP, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):5, Transition Frequency-Nom (fT):5 mΩz

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Product group Modules Explore Modules Explore Transistor Explore Power Bipolar Transistors
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