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MJB18004D2T4

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onsemi MJB18004D2T4

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ON Semiconductor MJB18004D2T4 Power Bipolar Transistor, Collector-Emitter Voltage-Max:450 V, Collector Current-Max (IC):5 A, Polarity/Channel Type:NPN, Surface ...

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Part number or familyMJB18004D2T4
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MJB18004D2T4 Power Bipolar Transistor, Collector-Emitter Voltage-Max:450 V, Collector Current-Max (IC):5 A, Polarity/Channel Type:NPN, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):18, Transition Frequency-Nom (fT):13 MHz
DescriptionON Semiconductor MJB18004D2T4 Power Bipolar Transistor, Collector-Emitter Voltage-Max:450 V, Collector Current-Max (IC):5 A, Polarity/Channel Type:NPN, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):18, Transition Frequency-Nom (fT):13 mΩz

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