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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MJ10020 Power Bipolar Transistor, Collector-Emitter Voltage-Max:200 V, Collector Current-Max (IC):60 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):75
DescriptionON Semiconductor MJ10020 Power Bipolar Transistor, Collector-Emitter Voltage-Max:200 V, Collector Current-Max (IC):60 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):75
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