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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FJP13007H2TU_F080 Power Bipolar Transistor, Collector-Emitter Voltage-Max:400 V, Collector Current-Max (IC):8 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):26, Transition Frequency-Nom (fT):4 MHz
DescriptionON Semiconductor FJP13007H2TU_F080 Power Bipolar Transistor, Collector-Emitter Voltage-Max:400 V, Collector Current-Max (IC):8 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):26, Transition Frequency-Nom (fT):4 mΩz
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