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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FJB3307DTM-H2 Power Bipolar Transistor, Collector-Emitter Voltage-Max:400 V, Collector Current-Max (IC):8 A, Polarity/Channel Type:NPN, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):26
DescriptionON Semiconductor FJB3307DTM-H2 Power Bipolar Transistor, Collector-Emitter Voltage-Max:400 V, Collector Current-Max (IC):8 A, Polarity/Channel Type:NPN, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):26
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