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DescriptionON Semiconductor BU522BBC Power Bipolar Transistor, Collector-Emitter Voltage-Max:425 V, Collector Current-Max (IC):7 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):250, Transition Frequency-Nom (fT):7.5 MHz
DescriptionON Semiconductor BU522BBC Power Bipolar Transistor, Collector-Emitter Voltage-Max:425 V, Collector Current-Max (IC):7 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):250, Transition Frequency-Nom (fT):7.5 mΩz
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