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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor BCP53T3G Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):1.5 A, Polarity/Channel Type:PNP, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:4, Number of Elements:1, DC Current Gain-Min (hFE):25, Transition Frequency-Nom (fT):50 MHz
DescriptionON Semiconductor BCP53T3G Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):1.5 A, Polarity/Channel Type:PNP, Surface mount:YES, Configuration:SINGLE, Number of Terminals:4, Number of Elements:1, DC Current Gain-Min (hFE):25, Transition Frequency-Nom (fT):50 mΩz
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