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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor 2SC3784 Power Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):1.2 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):1000, Transition Frequency-Nom (fT):180 MHz
DescriptionON Semiconductor 2SC3784 Power Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):1.2 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):1000, Transition Frequency-Nom (fT):180 mΩz
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