onsemi 2SC3503E-RA overview
2SC3503E-RA is a transistor made by onsemi. ON Semiconductor 2SC3503E-RA Power Bipolar Transistor, Collector-Emitter Voltage-Max:300 V, Collector Current-Max (IC):100 mA, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):100…
Product details
Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor 2SC3503E-RA Power Bipolar Transistor, Collector-Emitter Voltage-Max:300 V, Collector Current-Max (IC):100 mA, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):100, Transition Frequency-Nom (fT):150 MHz
DescriptionON Semiconductor 2SC3503E-RA Power Bipolar Transistor, Collector-Emitter Voltage-Max:300 V, Collector Current-Max (IC):100 mΩ, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):100, Transition Frequency-Nom (fT):150 mΩz
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
onsemi
View onsemi profile
Available from
Sourcing support available
Start a sourcing request