Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor 2SB1226 Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:PNP, Surface Mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):1500, Transition Frequency-Nom (fT):20 MHz
DescriptionON Semiconductor 2SB1226 Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:PNP, Surface mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):1500, Transition Frequency-Nom (fT):20 mΩz
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
onsemi
View onsemi profile
Available from
Sourcing support available
Start a sourcing request