Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor 2SB1167T GP BJT, Trans GP BJT PNP 100V 3A 1200mW 3-Pin TO-126LP
DescriptionON Semiconductor 2SB1167T Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:PNP, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):200, Transition Frequency-Nom (fT):130 mΩz
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onsemi
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Modules
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